EEL 6093 Computational Nanoelectronics
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Rapid development of nanotechnology makes it possible to fabricate and engineer nanostructures like silicon nano-transistors and carbon nanotube devices. Conventional concepts for understanding microelectronic devices, like drift-diffusion, can not be extended to understanding nanosystems. A new bottom-up view is required. The purpose of this course is to convey important concepts for understanding nanoelectronic devices, including silicon nanotransistors, nanowire, nanotube, and molecular transistors. The course consists of three parts (1) introduction to quantum theory for electron device applications, (2) device theory of nanoscale transistors, and (3) final presentations on nanoelectronics by students.
Prerequisite: Basic understanding of semiconductor devices (at the undergraduate device course level). No requirement for quantum mechanics is needed.
Goals: (1) To develop an understanding of nanoscale electronic devices, (2) to develop an in-depth understanding of semiconductor materials and nanostructures
Instructor: Dr. Jing Guo (NEB 551, guoj@ufl.edu)
Text:
1. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling, and Simulation, Springer, 2005
2.
S. Datta,
Topics:
Part 1: Based on
1. Basics of Schrödinger Equation (2 weeks)
2. Self-Consistent Electrostatics (1 week)
3. Calculation of Semiconductor Bandstructures (1 week)
4. Simulation of Nanostructure Bandstructures (1 week)
5. Nanoscale MOS Capacitors (1 week)
Exam I
Part 2: Based on M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling, and Simulation, Springer, 2005.
6. Nanoscale Si transistors (1 week)
7. Scattering Theory for Nanotransistors (1 week)
8. Device Physics of Carbon Nanotube Transistors (2 weeks)
9. Molecular Conduction (1 week)
10. Device Theory of Single Electron Transistors (1 week)
11. Project presentation (1 weeks)
Grading: (1) 45% Exam I, (2) 45% Project presentation, and (3) 10% Homework