EEL 6397 Semiconductor Device Theory

(Spring, 2010, 1:55-2:45pm T, 1:55-3:50pm, R, NEB 201)

Goals: (1) Develop a fundamental understanding on the device physics of the most important semiconductor devices, such as PN junctions, metal-semiconductor contacts, metal-oxide-semiconductor capacitors, and field-effect transistors.

(2) Develop the capability to analyze device characteristics based on fundamental device theories.

(3) Appreciate the technological applications of devices, such as device technologies in energy-converting, computing, and memory chips.

Pre-requisites and Co-requisites

EEE 5426 (EEE 4420) Introduction to Nanodevices* or equivalent or consent by instructor.

*There will be some review as needed.

Instructor: Dr. Jing Guo ( NEB 551, guoj@ufl.edu)

Text: "Modern Semiconductor Devices for Integrated Circuits," Chenmimg Calvin Hu, Prentice Hall, 2009.

References: (1) “Advanced Semiconductor Fundamentals,” R. F. Pierret, Volume VI, Modular Series on Solid State Devices, Addison-Wesley Publishing Company. (required)

(2) “Physics of Semiconductor Devices,” S. M. Sze, John Wiley & Sons, 1981

(3) “Fundamentals of Modern VLSI Devices,” Y. Taur and T. Ning, Cambridge University Press, 1998

Office hours: 11am-12noon, Mon., Wed. (NEB551)

Topics:

1. Carrier Statistics and RG theory (2 weeks)

2. Carrier Transport Theory (1 week)

3. PN Junctions (2 weeks)

4. Metal-Semiconductor Junctions (1 week)

5. Metal-Oxide-Semiconductor Capacitors (1 week)

6. Silicon MOSFETs (4 weeks)

7. Bipolar Transistors (1 week)

Grading:

1. 5% homework: Late homework or failure of submission results in loss of points.

2. 45% exam 1: A midterm exam is tentatively scheduled on Mar. 5^th.

3. 50% exam 2: A comprehensive exam that covers all materials will be held in class on April 15^th, Thursday.

4. The overall class average determines the B+ and A breakpoint. (B: one stdv. below the average; C+: 2 stdv. below the average.)