Journal Publications
50. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo "Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs," IEEE Trans. on Electron Devices, in press, 2008.
49. Y. Ouyang, X. Wang, H. Dai, and J. Guo "Carrier Scattering in Graphene Nanoribbon Transistors," Appl Phys. Lett., in press, 2008.
48. B. Liu, M. McCarthy, Y. Yoon, D. Kim, Z. Wu, F. So, P. Hooloway, J. Reynolds, J. Guo, and A. Rinzler, "Carbon nanotube enabled vertical field-effect and light emitting tansistors," Advanced Materials, in press, 2008.
47. J. Guo, D. Gunlycke, and C. T. White "Field effect on spin-polarized transport in graphene nanoribbons," Appl Phys. Lett., 92, 163109, 2008.
46. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, H. Dai"Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors" Phys. Rev. Lett., 100, 206803, 2008.
45. S. Hong, Y. Yoon, and J. Guo "Metal-Semiconductor Junctions in All-Graphene Devices and Circuits," Appl Phys. Lett., 92, 083107, 2008.
44. Y. Ouyang, P. Campbell and J. Guo "Analysis of Ballistic Monolayer and Bilayer Graphene Field-Effect Transistors," Appl Phys. Lett., 92, 063120, 2008.
43. Y. Yoon, J. Fodor, and J. Guo "A Computational Study of Vertical Partial Gate Carbon Nanotube FETs
," IEEE Trans. on Electron Devices , 55, 283, 2008.
42. A. Behnam, J. Guo, and A. Ural "Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films," Journal of Appl Phys. , 102, 044313, 2007.
41. Y. Yoon, and J. Guo "Effect of Edge Roughness in Graphene Nanoribbon Transistors," Appl Phys. Lett., 91, 073103, 2007.
40. J. Guo, Y. Yoon, and Y. Ouyang " Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons," Nano Lett., 7, 1935, 2007.
39. Y. Ouyang, D. Mann, H. Dai, and J. Guo "Theoretical Investigations of Thermal Light Emission from Carbon Nanotubes," IEEE Trans. on Nanotechnology, 6, 682, 2007.
38. Y. Ouyang, Y. Yoon, and J. Guo "Scaling Behaviors of Graphenen Nanoribbon FETs: a 3D Quantum Simulation," IEEE Trans. on Electron Devices, 54, 2223, Sep. 2007.
37. Y. Yoon and Jing Guo "Analysis of Strain Effects in Ballistic Carbon Nanotube FETs," IEEE Trans. on Electron Devices, 54 p. 1280, 2007.
36. J. Guo, M. Alam, and Y. Ouyang "Sub-Bandgap Impact Ionization and Excitation in Carbon Nanotube Transistors," Journal of Applied Physics, 101, 064311, 2007.
35. D. Mann, Y. K. Kato, A. Kinkhabwala, E. Pop, J. Cao, X. Wang, L. Zhang, Q. Wang, J. Guo, and H. Dai, "Electrically Driven Thermal Light Emission from Individual Single-Walled Carbon Nanotubes," Nature Nanotechnology, 2, 33, Jan. 2007.
34. Y. Yoon, J. Lin, S. Pearton, and J. Guo, "Role of Grain Boundaries in ZnO Nanowire Transistors," Journal of Applied Physics, 101, 024301 Jan. 2007.
33. Y. Ouyang, Y. Yoon, and J. Guo, "On Current Delivery Limits of Semiconducting Carbon Nanotubes," Journal of Computer Aided Material Design, 14, 73, 2007.
32. N. Pimparkar, J. Guo, and M. A. Alam "Performance Assessment of Sub-Percolating Nanobundle Network Thin Film Transistors by an Analytical Model ," IEEE Trans. on Electron Devices, 54 , 637, 2007.
31. Y. Chen, Y. Ouyang, J. Guo, and T. Wu "Time-Dependent Transport and Non-Quasi Static Effects in Carbon Nanotube Transistors," Applied Physics Letters, 89, 203122, 2006.
30. Y. Ouyang, Y. Yoon, J. Fodor, and J. Guo, "Comparison of Performance Limits for Carbon Nanribbon and Carbon Nanotube Transistors," Applied Physics Letters, 89, 203107, 2006.
29. Y. Ouyang, and J. Guo, "Heat Dissipation in Carbon Nanotube Transistors," Applied Physics Letters, 89, 183122, 2006.
28. J. Guo, M. A. Alam, and Y. Yoon, "Theoretical Investigations on Photoconductivity of Single Intrinsic Carbon Nanotubes," Applied Physics Letters, vol. 88, 133111, 2006.
27. Y. Yoon, Y. Ouyang, and J. Guo, "Effect of Phonon Scattering on Intrisic Delay and Cut-Off Frequency of CNTFETs," vol. 52, 2467-2470, IEEE Trans. on Electron Devices, 2006.
26. J. Guo, E. C. Kan, U. Ganguly, and Y. Zhang, "High Sensitivity and Non-Linearity of Carbon Nanotube Based Charge Sensors," Journal of Applied Physics, vol. 99, 084301, 2006.
25. N. Neophytou, J. Guo, and M. Lundstrom, "Three-Dimensional Electrostatic Effects of Carbon Nanotube Transistors," IEEE Trans. on Nanotechnology, 4, 385, 2006.
24. J. Guo,"A Quantum Mechanical Treatment of Phonon Scattering in Carbon Nanotube Transistors," Journal of Applied Physics, 98, 063519, 2005. [PDF 325k]
23. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, " Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors," IEEE Trans. on Nanotechnology, vol. 4, p. 715, 2005. [PDF 330k]
22. J. Guo, M. Lundstrom, "On the Role of Phonon Scattering in Carbon Nanotube Transistors," Applied Physics Letters, 86, 193103, 2005. [PDF 200k]
21. J. Guo, S. Koswatta, N. Neophytou, and M. Lundstrom "Carbon Nanotube Field-Effect Transistors," International Journal of High Speed Electronics and Systems, invited, 16, 897, 2006. [PDF 325k]
20. J. Guo, M. A. Alam, "Carrier Transport and Light-Spot Movement in Carbon Nanotube Infrared Emitters," Applied Physics Letters, 86, 023105, 2005. [PDF 180k]
19. A. Javey, R. Tu, D. Farmer, J. Guo, R. Gordon, and H. Dai, "High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts," Nano Letters, vol. 5, 345-348, 2005. [PDF 219k]
18. J. Guo, S. Datta, M. P. Anantram, and M. Lundstrom, "Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green's Function Formalism," Jounral of Computational Electronics, vol. 3, 373-377, 2004.
17. S. Hasan J. Guo, M. Vaidyanathan, M. A. Alam, and M. Lundstrom, "Monte-Carlo Simulation of Carbon Nanotube Devices," Journal of Computational Electronics , vol. 3, p. 333-336, 2004
16. N. Neophytou, M. Lundstrom and J. Guo, "Electrostatics of 3D Carbon Nanotube Field-Effect Transistors," Journal of Computational Electronics , vol. 3, p. 277-280, 2004
15. J. Guo, Supriyo Datta and M. Lundstrom, "A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors," IEEE Transactions on Electron Devices , vol. 51, p. 172, Feb, 2004. [PDF 279k]
14. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom and H. Dai, "High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes," vol. 92, p. 106804, 2004 Physical Review Letters [PDF 323k]
13. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, "Multi-Scale Modeling of Carbon Nanotube Transistors,", The International Journal on Multiscale Computational Engineering (Invited), vol. 2, p. 257, 2004. [PDF 1300k]
12. A. Javey, J. Guo, D. B. Farmer et al., ˇ°Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics,ˇ± Nano Letters, vol. 4, p. 447, 2004.
11. A. Javey, J. Guo, D. B. Farmer, W. Wang, E. Yenilmez, R. Gordon, M. Lundstrom, and H. Dai, "Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays," Nano Letters, vol. 4, p. 1319, 2004.
10. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, "Ballistic Carbon Nanotube Field-Effect Transistors," Nature, vol. 424, p. 654, 2003 [PDF 539k]
9. J. Guo, J. Wang, E. Polizzi, Supriyo Datta and M. Lundstrom and H. Dai, "Electrostatics of Nanowire Transistors," IEEE Transactions on Nanotechnology, vol. 2, p. 329, Dec, 2003 [PDF 280k]
8. A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Transistors," IEEE Transactions on Electron Devices, vol. 50, p. 1897, 2003 [PDF 965k]
7. J. Guo, S. Goasguen, M. Lundstrom and S. Datta, "Metal-Insulator-Semiconductor Electrostatics of Carbon Nanotubes," Applied Physics Letters, vol. 81, p. 1486, 2002 [PDF 109k]
6. J. Guo, M. Lundstrom and S. Datta, "Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors," Applied Physics Letters, vol. 80, no. 17, p. 3192, 2002 [PDF 124k]
5. J. Guo and M. Lundstrom, "A Computational Study of Thin-Body, Double-Gate, Schottky Barrier MOSFETs" IEEE Transactions on Electron Devices, vol. 49, p. 1897, 2002 [PDF 525k]
4. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High Dielectrics For Advanced Carbon Nanotube Transistors and Logic," Nature Materials, vol. 1, p.241, 2002 [PDF 491k]
3. J. Guo, Z. Ren and Mark Lundstrom, "A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance," Journal of Computational Electronics, vol. 1, p. 185,2002 [PDF 76k]
2. J. Guo J. Jiang and Q. Cai, "The Tunneling Conductance inside the unit Cell of Bi2Sr2CaCu2O8," Physica C, vol. 341-348, p. 1551, 2000 [PDF 109k]
1. J. Guo J. Jiang and Q. Cai, "The Fine Structures in I-V curves of Single-Electron Transistor Made by Double Unit Cells of Bi2Sr2CaCu2O8," Physica C, vol. 341-348, p. 1603, 2000 [PDF 109k]