Journal Publications

**122.** L. Liu and J. Guo, ¡°Assessment of Performance Potential of MoS2-Based Topological Insulator FETs,¡± *J. Appl. Phys.*, vol. 118, p. 124502, 2015.

**121.** W. Chen, W. Yin, E. Li, M. Cheng, and J. Guo, ¡°Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase Change Memory Array for 3-D ICs,¡± *IEEE Electron Dev. Lett.*, vol. 62, p. 3258, 2015.

**120.** T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, and A. Javey, "Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors", *ACS Nano*, vol. 9, pp.2071¨C2079, 2015.

**119.** K. T. Lam and J. Guo, ¡°Plasmonics in strained monolayer black phosphorus,¡± *J. Appl. Phys.*, vol. 117, p. 113105, 2015.

**118.** C. Chen, J. Wu1, K. T. Lam, G. Hong, M. Gong, B. Zhang, Y. Lu, A. Antaris, S. Diao, J. Guo and H. Dai. "Graphene Nanoribbons Under Mechanical Strain" * Advanced Materials*, vol. 5, pp. 4070-4075, 2014.

**117.** R. Wan, X. Cao, and J. Guo, "Simulation of Phosphorene Schottky Barrier Transistors," *Appl. Phys. Lett.,*, vol. 105, p. 163511, 2014.

**116.** K. Lam, Z. Dong, and J. Guo, "Performance Limits Projection of Black Phosphorous Field-Effect Transistors," *IEEE Electron Dev. Lett.*, doi:10.1109/LED.2014.2333368, vol. 35, p. 963, 2014.

**115.** C. Lee, G. Lee., A. Zande. W. Chen. Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls T. Heinz, J. Guo. J. Hone, and P. Kim, "Atomically Thin p-n Junctions with Van der Waals Heterointerfaces," *Nature Nanotechnology*, doi:10.1038/nnano.2014.150, vol. 9, p. 676, 2014.

**114.** S. B. Desai, G. Seol, J. S. Kang, H. Fang, C. Battaglia, R. Kapadia, J. W. Ager, J. Guo, and A. Javey. "Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2", *Nano Letters*, vol. 14, p. 4592, 2014

**113.** K. Lam, G. Seol, and J. Guo "Operating Principles of Vertical Transistors Bsed on Monolayeer Two-Dimensional Semiconductor Heterojunctions," *Appl. Phys. Lett.*, vol. 105, p. 013122, 2014.

**112.** W. Chen, F. So, and J. Guo, "Intrinsic Delay of Permeable Base Transistor," *J. Appl. Phys.*, vol. 116, p. 044505, 2014.

**111.** H. Yu, J. Kim, W. Chen. D. Kim, J. Guo. and F. So, "Effect of Nano-Porosity on High Gain Permeable Metal-Base Transistors," *Advanced Functional Materials*, DOI: 10.1002/adfm.201400634, 2014

**110.** Q, Gao and J. Guo, "Role of Chemical termination in Edge Contact to Graphene," *APL Materials*, vol. 2, p.056105, 2014.

**109.** K. Lam and J. Guo, "Frequency-dependent quantum capacitance and plasma wave in monolayer transition metal dichalcogenides," *Appl. Phys. Lett.*, vol. 104, p. 103111, 2014.

**108.** L. Liu, Y. Lu, and J. Guo, "On Monolayer MoS2 Field-Effect Transistors at the Scaling Limit", *IEEE Trans. Electron Devices*, vol. 60, p. 4133, 2013.

**107.** K. Lam, X. Cao and J. Guo, "Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer", *IEEE Electron Device Letters*, vol. 34, p. 1331, 2013.

**106.** L. Wang, I. Meric, P.Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. Campos, D. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, and C. R. Dean, "One-dimensional contact to a two-dimensional material", *Science*, vol. 342, p. 614, 2013.

**105.** L. Liu, Y. Lu, and J. Guo, "Coupled Electro-Thermal Simulation for Self-Heating Effects in Graphene Transistors", *IEEE Trans. Electron Devices*, vol. 60, p. 2598, 2013.

**104.** W. Chen, A. Rinzler and J. Guo, "Modeling and Simulation of Carbon Nanotube-Semiconductor Heterojunction Vertical Transistors", *J. Appl. Phys.*, vol. 113, p. 234501, 2013.

**103.** B. Kumar and J. Guo, "On Pseudomagnetoresistance in Graphene Junctions", *J. Computational Electronics*, vol. 12, p. 165, 2013.

**102.** H. Fang, M. Tosun, G. Seol, T. C. Chang, K. Takei, J. Guo and A. Javey, "Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium", *Nano Lett.*, vol. 13, p. 1991, 2013.

**101.** S. Chuang, Q. Gao, R. Kapadia, A. C. Ford, J. Guo, A. Javey, "Ballistic InAs Nanowire Transistors", *Nano Lett.*, vol. 13, p. 555, 2013.

**100.** Y. Lu and J. Guo, "Quantum simulation of topological insulator based spin transfer torque device", *Appl. Phys. Lett.*, vol. 102, p. 073106, 2013.

**99.** W. Chen, A. Rinzler, and J. Guo, "Computational Study of Graphene-Based Vertical Field Effect Transistor", *J. Appl. Phys.*, vol. 113, p. 094507, 2013.

**98.** J. Chauhan, A. Rinzler, and J. Guo, "A Computational Study of Graphene Silicon Contact", *J. Appl. Phys.*, vol. 112, p. 104502, 2012.

**97.** Q. Gao and J. Guo, "Quantum Mechanical Simulation of Graphene Photodetectors", *J. Appl. Phys. *, vol. 112, p. 084316, 2012.

**96.** J. Guo, "Modeling of Graphene Nanoribbon Devices", *Nanoscale*, DOI: 10.1039/C2NR31437A, vol. 4, p. 5538, 2012 (Feature Article).

**95.** Y. Lu and J. Guo, "Thermal Transport in Grain Boundary of Graphene by Non-equilibrium Green's Function Approach", *Appl. Phys. Lett.*, vol. 101, p. 043112, 2012.

**94.** B. Kumar, G. Seol, and J. Guo, "Modeling of a Vertical Tunneling Graphene Heterojunction Field-Effect Transistor", *Appl. Phys. Lett. *, vol. 101, p. 033503, 2012.

**93.** J. Chauhan, L. Liu, Y. Lu, and J. Guo, "A Computational Study of High-Frequency Behavior of Graphene Field-Effect Transistors", *J. of Appl. Phys. *, vol. 111, p. 094311, 2012.

**92.** B. Kumar and J. Guo, "Chiral tunneling in trilayer graphene", *Appl. Phys. Lett.*, vol. 100, p. 163102, 2012.

**91.** K. Takei, M. Madsen, H. Fang, R. Kapadia, S. Chuang, H. Kim, C. Liu, E. Plis, J. Nah, S. Krishna, Y. Chueh, J. Guo, A. Javey, "Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors", *Nano Lett.*, vo. 12, p. 2060, 2012.

**90.** J. Nah, B. Kumar, H. Fang, Y. Chen, E. Plis, Y. Chueh, S. Krishna, J. Guo, A. Javey, "Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors", *Journal of Physical Chemistry*, vol. 116, p. 9750, 2012.

**89.** B. Kumar and J. Guo, "Strain-induced conductance modulation in graphene grain boundary", *Nano Lett.*, vol. 12, p. 1362, 2012.

**88.** W. Chen, G. Seol, A. Rinzler, and J. Guo, "Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon junction solar cell", *Appl. Phys. Lett.*, vol. 100, p. 103503, 2012.

**87.** A. C. Ford, S. B. Kumar, R. Kapadia, J. Guo, A. Javey, "Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires", *Nano Lett.*, vol. 12, p. 1340, 2012.

**86.** G. Seol and J. Guo, " Metal Contact to Graphene Nanoribbon," *Appl. Phys. Lett. *, vol. 100, p. 063108, 2012.

**85.** G. Seol, B. Kumar, and J. Guo, "Performance Projection of Graphene Nanomesh and Nanoroad Transistors, " *Nano Research *, vol. 5, p. 164, 2012.

**84.** Q. Gao and J. Guo, "Ab initio quantum transport simulation of silicide-silicon contacts," *J. Appl. Phys.*, vol. 111, p. 014305, 2012.

**83.** B. Kumar and J. Guo, " Modelling very large magnetoresistance of graphene nanoribbon devices"*Nanoscale *, vol. 4, p.982, 2012.

**82.** J. Wu, L. Xie, Y. Li, H. Wang, Y. Ouyang, J. Guo, and H. Dai. "Controlled Chlorine Plasma Reaction for Noninvasive Graphene Doping." *J. Am. Chem. Soc.*, vol. 133, 19668, 2011.

**81.** W. Chen and J. Guo, " Performance analysis of carbon nanotube contacted phase change memory by finite element method," *J. Appl. Phys.*, vol. 110, p. 084315, 2011.

**80.** K. Takei, H. Fang, B. Kumar, R. Kapadia, Q. Gao, H. Liu, Y. Chueh, E. Plis, S. Krishna, H. Bechtel, J. Guo, A. Javey, " Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes," *Nano Lett. *, vol. 11 p. 5008 2011.

**79.** Q. Gao and J. Guo, " Barrier height determination of silicide-silicon contact by hybrid density functional simulation," *Appl. Phys. Lett.*, vol. 99, p.183110, 2011.

**78.** X. Wang, Y. Ouyang, L. Jian. H. Wang, L. Xie, J. Wu, J. Guo, and H. Dai "Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires," *Nature Nanotech. *, vol. 6, p.563, 2011.

**77.** J. Chauhan and J. Guo "Inelastic Phonon Scattering in Graphene FETs," *IEEE Trans. on Electron Devices *, vol. 58, p. 3997, 2011.

**76.** L Liu, B. Kumar, Y. Ouyang, and J. Guo "Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors," *IEEE Trans. on Electron Devices *, vol. 58, p. 3042, 2011.

**75.** B. Kumar and J. Guo "Transversal electric field effect in multilayer graphene nanoribbon," *Appl. Phys. Lett. *, vol. 98, p. 263105, 2011.

**74.** B. Kumar and J. Guo "Multilayer Graphene Nanoribbon Under Vertical Electric field," *J. Appl. Phys. *, vol. 109, p. 222101, 2011.

**73.** P. Wadhwa, G. Seol, M Petterson, J. Guo, and A. Rinzler "Electrolyte-Induced Inversion Layer Schottky Junction Solar Cell," *Nano Lett *, vol. 11, p. 2419, 2011.

**72.** Q. Gao and J. Guo "Two-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale SOI MOSFETS," *J. of Appl. Phys. *, vol. 109, p. 104307, 2011.

**71.** B. Kumar and J. Guo "Multilayer graphene under vertical electric field," *Appl. Phys. Lett.*, vol. 98, p. 222101, 2011.

**70.** G. Seol and J. Guo "Mechanism of Bandgap Opening in Armchair Graphene Nanoribbon Confined by Boron Nitride," *Appl. Phys. Lett.*, vol. 98, p. 143107, 2011.

**69.** J. Chauhan and J. Guo "
Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors ," *Nano Research*, vol. 4, p. 571, 2011.

**68.** Y. Ouyang and J. Guo "Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation," *Solid State Electronics*, vol. 61, p. 18, 2011.

**67.** Y. Ouyang and J. Guo "Carbon-based nanomaterials as contacts to graphene nanoribbons," *Appl. Phys. Lett.*, vol. 97, p. 263115, 2010.

**66.** Y. Ouyang, S. Sanvito and J. Guo "Effects of edge chemistry doping on graphene nanoribbon mobility," *Surface Sciences*, doi:10.1016/j.susc.2010.10.030, 2010.

**65.** Y. Lu and J. Guo "Edge Dopant Energy Levels of Graphene Nanoribbons," *Appl. Phys. Lett.*, vol. 97, p. 113102, 2010.

**64.** S.J. Pearton, C.Y. Chang, B.H. Chu, C.F. Lo, F. Ren, Wenchao Chen and Jing Guo "ZnO, GaN and InN Functionalized Nanowires For Sensing and Photonics Applications
," *IEEE Journal of Selected Topics in Quantum Electronics*,accepted, 2010.

**63.** M. Choudhury, Y. Yoon, J. Guo, and K. Mohanram "Graphene Nanoribbon FETs: Technology Exploration for Perfomrance and Reliability," *IEEE Trans. on Nanotechnology *, vol. 10, p. 727, 10.1109/TNANO.2010.2073718, 2010.

**62.** Y. Lu and J. Guo "Local Strain in Tunneling Transistors Based on Graphene Nanoribbons," *Appl. Phys. Lett.*, vol. 97, p. 073105, 2010.

**61.** Y. Lu and J. Guo "Bandgap of Strained Graphene Nanoribbons," *Nano Research*, vol. 3, p. 189, 2010.

**60.** Y. Ouyang, H. Dai, and J. Guo "Projected Performance Advantage of Multilayer Graphene Nanoribbons as a Transistor Channel Material," *Nano Research*, vol. 3, p. 8 2010.

**59.** J. Chauhan and J. Guo "High Field Transport and Velocity Saturation in Graphene," *Appl Phys. Lett.*, vol. 95,023120, 2009.

**58.** J. Guo and Y. Ouyang "Spin-Polarized Edge and Transport in Graphane Nanoscale Junctions," *Appl Phys. Lett.*, vol. 94, 263107, 2009.

**57.** Y. Ouyang and J. Guo "A Theoretical Study on Thermoelectric Properties of Graphene Nanoribbons," *Appl Phys. Lett.*, vol. 94, 243104, 2009.

**56.** X. Wang, X. Li, L. Zhang, Y. Yoon, P. Weber, H. Wang, J. Guo, and H. Dai "N-Doping of Graphene Through Electrothermal Reactions with Ammonia," *Science*, vol. 324, p. 768, 2009.
(News Release: Sciencedaily, UF News)

**55.** P. Zhao, J. Chauhan, and J. Guo "A Computational Study of Tunneling Transistor Based on Graphene Nanoribbon," *Nano Lett.*, vol. 9, p. 684, 2009.

**54.** A. Ford, J. C. Ho, Y.-L. Chueh, Y.-C. Tseng, Z. Fan, J. Guo, J. Bokor, A. Javey "Diameter-Dependent Electron Mobility of InAs Nanowires," *Nano Lett.*, vol. 9, p. 360, 2009.

**53.** P. Zhao and J. Guo "Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods," *J. Appl. Phys.*, vol. 105, p. 034503, 2009.

**52.** S. Pearton D. Norton, L. Tien, and J. Guo "Modeling and Fabrication of ZnO Nanowire Transistors," *IEEE Trans. on Electron Devices*, vol. 55, p. 3012, Nov, 2008 (Invited).

**51.** P. Zhao, M. Choudhury, K. Mohanram, and J. Guo "Computational Model of Edge Effects in Graphene Nanoribbon Transistors," *Nano Research*, vol. 1, no. 5, pp. 395-402, 2008.

**50.** Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo "Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs," *IEEE Trans. on Electron Devices*, vol. 55, no. 9, pp. 2314-2323, 2008.

**49.** Y. Ouyang, X. Wang, H. Dai, and J. Guo "Carrier Scattering in Graphene Nanoribbon Transistors," *Appl Phys. Lett.*, 92, 243124, 2008.

**48.** B. Liu, M. McCarthy, Y. Yoon, D. Kim, Z. Wu, F. So, P. Hooloway, J. Reynolds, J. Guo, and A. Rinzler, "Carbon nanotube enabled vertical field-effect and light emitting tansistors," *Advanced Materials*, vol. 20, pp. 3605-3609, 2008.

**47.** J. Guo, D. Gunlycke, and C. T. White "Field effect on spin-polarized transport in graphene nanoribbons," *Appl Phys. Lett.*, 92, 163109, 2008.

**46.** X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, H. Dai"Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors" *Phys. Rev. Lett.*, 100, 206803, 2008.

**45.** S. Hong, Y. Yoon, and J. Guo "Metal-Semiconductor Junctions in All-Graphene Devices and Circuits," *Appl Phys. Lett.*, 92, 083107, 2008.

**44.** Y. Ouyang, P. Campbell and J. Guo "Analysis of Ballistic Monolayer and Bilayer Graphene Field-Effect Transistors," *Appl Phys. Lett.*, 92, 063120, 2008.

**43.** Y. Yoon, J. Fodor, and J. Guo "A Computational Study of Vertical Partial Gate Carbon Nanotube FETs
," *IEEE Trans. on Electron Devices *, 55, 283, 2008.

**42.** A. Behnam, J. Guo, and A. Ural "Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films," *Journal of Appl Phys. *, **102**, 044313, 2007.

**41.** Y. Yoon, and J. Guo "Effect of Edge Roughness in Graphene Nanoribbon Transistors," *Appl Phys. Lett.*, **91**, 073103, 2007.

**40.** J. Guo, Y. Yoon, and Y. Ouyang " Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons," *Nano Lett.*, **7**, 1935, 2007.

**39.** Y. Ouyang, D. Mann, H. Dai, and J. Guo "Theoretical Investigations of Thermal Light Emission from Carbon Nanotubes," *IEEE Trans. on Nanotechnology*, 6, 682, 2007.

**38.** Y. Ouyang, Y. Yoon, and J. Guo "Scaling Behaviors of Graphenen Nanoribbon FETs: a 3D Quantum Simulation," *IEEE Trans. on Electron Devices*, **54**, 2223, Sep. 2007.

**37.** Y. Yoon and Jing Guo "Analysis of Strain Effects in Ballistic Carbon Nanotube FETs," *IEEE Trans. on Electron Devices*, **54** p. 1280, 2007.

**36.** J. Guo, M. Alam, and Y. Ouyang "Sub-Bandgap Impact Ionization and Excitation in Carbon Nanotube Transistors," *Journal of Applied Physics*, **101**, 064311, 2007.

**35.** D. Mann, Y. K. Kato, A. Kinkhabwala, E. Pop, J. Cao, X. Wang, L. Zhang, Q. Wang, **J. Guo**, and H. Dai, "Electrically Driven Thermal Light Emission from Individual Single-Walled Carbon Nanotubes," *Nature Nanotechnology*, **2**, 33, Jan. 2007.

**34.** Y. Yoon, J. Lin, S. Pearton, and J. Guo, "Role of Grain Boundaries in ZnO Nanowire Transistors," *Journal of Applied Physics*, **101**, 024301 Jan. 2007.

**33.** Y. Ouyang, Y. Yoon, and J. Guo, "On Current Delivery Limits of Semiconducting Carbon Nanotubes," *Journal of Computer Aided Material Design*, **14**, 73, 2007.

**32.** N. Pimparkar, J. Guo, and M. A. Alam "Performance Assessment of Sub-Percolating Nanobundle Network Thin Film Transistors by an Analytical Model ," *IEEE Trans. on Electron Devices*, **54 **, 637, 2007.

**31.** Y. Chen, Y. Ouyang, J. Guo, and T. Wu "Time-Dependent Transport and Non-Quasi Static Effects in Carbon Nanotube Transistors," *Applied Physics Letters*, **89**, 203122, 2006.

**30.** Y. Ouyang, Y. Yoon, J. Fodor, and J. Guo, "Comparison of Performance Limits for Carbon Nanribbon and Carbon Nanotube Transistors," *Applied Physics Letters*, **89**, 203107, 2006.

**29.** Y. Ouyang, and J. Guo, "Heat Dissipation in Carbon Nanotube Transistors," *Applied Physics Letters*, **89**, 183122, 2006.

**28.** J. Guo, M. A. Alam, and Y. Yoon, "Theoretical Investigations on Photoconductivity of Single Intrinsic Carbon Nanotubes," *Applied Physics Letters*, vol. 88, 133111, 2006.

**27.** Y. Yoon, Y. Ouyang, and J. Guo, "Effect of Phonon Scattering on Intrisic Delay and Cut-Off Frequency of CNTFETs," vol. 52, 2467-2470, *IEEE Trans. on Electron Devices*, 2006.

**26.** ** J. Guo**, E. C. Kan, U. Ganguly, and Y. Zhang, "High Sensitivity and Non-Linearity of Carbon Nanotube Based Charge Sensors," *Journal of Applied Physics*, vol. 99, 084301, 2006.

**25.** N. Neophytou, ** J. Guo**, and M. Lundstrom, "Three-Dimensional Electrostatic Effects of Carbon Nanotube Transistors," *IEEE Trans. on Nanotechnology*, 4, 385, 2006.

**24.** ** J. Guo**,"A Quantum Mechanical Treatment of Phonon Scattering in Carbon Nanotube Transistors," *Journal of Applied Physics*, 98, 063519, 2005. [PDF 325k]

**23.** ** J. Guo**, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, " Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors," *IEEE Trans. on Nanotechnology*, vol. 4, p. 715, 2005. [PDF 330k]

**22.** ** J. Guo**, M. Lundstrom, "On the Role of Phonon Scattering in Carbon Nanotube Transistors," *Applied Physics Letters*, 86, 193103, 2005. [PDF 200k]

**21.** ** J. Guo**, S. Koswatta, N. Neophytou, and M. Lundstrom "Carbon Nanotube Field-Effect Transistors," *International Journal of High Speed Electronics and Systems*, invited, **16**, 897, 2006. [PDF 325k]

**20.** ** J. Guo**, M. A. Alam, "Carrier Transport and Light-Spot Movement in Carbon Nanotube Infrared Emitters," *Applied Physics Letters*, 86, 023105, 2005. [PDF 180k]

**19.** A. Javey, R. Tu, D. Farmer, ** J. Guo**, R. Gordon, and H. Dai, "High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts," *Nano Letters*, vol. 5, 345-348, 2005. [PDF 219k]

**18.** ** J. Guo**, S. Datta, M. P. Anantram, and M. Lundstrom, "Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green's Function Formalism," *Jounral of Computational Electronics*, vol. 3, 373-377, 2004.

**17.** S. Hasan ** J. Guo**, M. Vaidyanathan, M. A. Alam, and M. Lundstrom, "Monte-Carlo Simulation of Carbon Nanotube Devices," *Journal of Computational Electronics *, vol. 3, p. 333-336, 2004

**16.** N. Neophytou, M. Lundstrom and ** J. Guo**, "Electrostatics of 3D Carbon Nanotube Field-Effect Transistors," *Journal of Computational Electronics *, vol. 3, p. 277-280, 2004

**15.** ** J. Guo**, Supriyo Datta and M. Lundstrom, "A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors," *IEEE Transactions on Electron Devices *, vol. 51, p. 172, Feb, 2004. [PDF 279k]

**14.** A. Javey, **J. Guo**, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom and H. Dai, "High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes," vol. 92, p. 106804, 2004 *Physical Review Letters* [PDF 323k]

**13.** **J. Guo**, S. Datta, M. Lundstrom, and M. P. Anantram, "Multi-Scale Modeling of Carbon Nanotube Transistors,", *The International Journal on Multiscale Computational Engineering* (Invited), vol. 2, p. 257, 2004. [PDF 1300k]

**12.** A. Javey, **J. Guo**, D. B. Farmer et al., ¡°Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics,¡± * Nano Letters*, vol. 4, p. 447, 2004.

**11.** A. Javey, **J. Guo**, D. B. Farmer, W. Wang, E. Yenilmez, R. Gordon, M. Lundstrom, and H. Dai, "Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays," Nano Letters, vol. 4, p. 1319, 2004.

**10.** A. Javey, **J. Guo**, Q. Wang, M. Lundstrom and H. Dai, "Ballistic Carbon Nanotube Field-Effect Transistors," *Nature*, vol. 424, p. 654, 2003 [PDF 539k]

**9.** **J. Guo**, J. Wang, E. Polizzi, Supriyo Datta and M. Lundstrom, "Electrostatics of Nanowire Transistors," *IEEE Transactions on Nanotechnology*, vol. 2, p. 329, Dec, 2003 [PDF 280k]

**8.** A. Rahman, **J. Guo**, S. Datta, and M. Lundstrom, "Theory of Ballistic Transistors," *IEEE Transactions on Electron Devices*, vol. 50, p. 1897, 2003 [PDF 965k]

**7.** **J. Guo**, S. Goasguen, M. Lundstrom and S. Datta, "Metal-Insulator-Semiconductor Electrostatics of Carbon Nanotubes," *Applied Physics Letters*, vol. 81, p. 1486, 2002 [PDF 109k]

**6.** **J. Guo**, M. Lundstrom and S. Datta, "Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors," *Applied Physics Letters*, vol. 80, no. 17, p. 3192, 2002 [PDF 124k]

**5.** **J. Guo** and M. Lundstrom, "A Computational Study of Thin-Body, Double-Gate, Schottky Barrier MOSFETs" *IEEE Transactions on Electron Devices*, vol. 49, p. 1897, 2002 [PDF 525k]

**4.** A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, **J. Guo**, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High Dielectrics For Advanced Carbon Nanotube Transistors and Logic," *Nature Materials*, vol. 1, p.241, 2002 [PDF 491k]

**3.** **J. Guo**, Z. Ren and Mark Lundstrom, "A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance," *Journal of Computational Electronics*, vol. 1, p. 185,2002 [PDF 76k]

**2.** **J. Guo** J. Jiang and Q. Cai, "The Tunneling Conductance inside the unit Cell of Bi2Sr2CaCu2O8," *Physica C*, vol. 341-348, p. 1551, 2000 [PDF 109k]

**1.** **J. Guo** J. Jiang and Q. Cai, "The Fine Structures in I-V curves of Single-Electron Transistor Made by Double Unit Cells of Bi2Sr2CaCu2O8," *Physica C*, vol. 341-348, p. 1603, 2000 [PDF 109k]