Journal Publications


116. K. Lam, Z. Dong, and J. Guo, "Performance Limits Projection of Black Phosphorous Field-Effect Transistors," IEEE Electron Dev. Lett., doi:10.1109/LED.2014.2333368, 2014.


115. C. Lee, G. Lee., A. Zande. W. Chen. Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls T. Heinz, J. Guo. J. Hone, and P. Kim, "Atomically Thin p-n Junctions with Van der Waals Heterointerfaces," Nature Nanotechnology, doi:10.1038/nnano.2014.150, 2014.


114. S. B. Desai, G. Seol, J. S. Kang, H. Fang, C. Battaglia, R. Kapadia, J. W. Ager, J. Guo, and A. Javey. "Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2", Nano Letters, ASAP, 2014.


113. K. Lam, G. Seol, and J. Guo "Operating Principles of Vertical Transistors Bsed on Monolayeer Two-Dimensional Semiconductor Heterojunctions," Appl. Phys. Lett., vol. 105, p. 013122, 2014.


112. W. Chen, F. So, and J. Guo, "Intrinsic Delay of Permeable Base Transistor," J. Appl. Phys., vol. 116, p. 044505, 2014.


111. H. Yu, J. Kim, W. Chen. D. Kim, J. Guo. and F. So, "Effect of Nano-Porosity on High Gain Permeable Metal-Base Transistors," Advanced Functional Materials, DOI: 10.1002/adfm.201400634, 2014


110. Q, Gao and J. Guo, "Role of Chemical termination in Edge Contact to Graphene," APL Materials, vol. 2, p.056105, 2014.


109. K. Lam and J. Guo, "Frequency-dependent quantum capacitance and plasma wave in monolayer transition metal dichalcogenides," Appl. Phys. Lett., vol. 104, p. 103111, 2014.


108. L. Liu, Y. Lu, and J. Guo, "On Monolayer MoS2 Field-Effect Transistors at the Scaling Limit", IEEE Trans. Electron Devices, vol. 60, p. 4133, 2013.


107. K. Lam, X. Cao and J. Guo, "Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer", IEEE Electron Device Letters, vol. 34, p. 1331, 2013.


106. L. Wang, I. Meric, P.Y. Huang, Q. Gao, Y. Gao, H. Tran, T. Taniguchi, K. Watanabe, L. Campos, D. Muller, J. Guo, P. Kim, J. Hone, K. L. Shepard, and C. R. Dean, "One-dimensional contact to a two-dimensional material", Science, vol. 342, p. 614, 2013.


105. L. Liu, Y. Lu, and J. Guo, "Coupled Electro-Thermal Simulation for Self-Heating Effects in Graphene Transistors", IEEE Trans. Electron Devices, vol. 60, p. 2598, 2013.


104. W. Chen, A. Rinzler and J. Guo, "Modeling and Simulation of Carbon Nanotube-Semiconductor Heterojunction Vertical Transistors", J. Appl. Phys., vol. 113, p. 234501, 2013.


103. B. Kumar and J. Guo, "On Pseudomagnetoresistance in Graphene Junctions", J. Computational Electronics, vol. 12, p. 165, 2013.


102. H. Fang, M. Tosun, G. Seol, T. C. Chang, K. Takei, J. Guo and A. Javey, "Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium", Nano Lett., vol. 13, p. 1991, 2013.


101. S. Chuang, Q. Gao, R. Kapadia, A. C. Ford, J. Guo, A. Javey, "Ballistic InAs Nanowire Transistors", Nano Lett., vol. 13, p. 555, 2013.


100. Y. Lu and J. Guo, "Quantum simulation of topological insulator based spin transfer torque device", Appl. Phys. Lett., vol. 102, p. 073106, 2013.


99. W. Chen, A. Rinzler, and J. Guo, "Computational Study of Graphene-Based Vertical Field Effect Transistor", J. Appl. Phys., vol. 113, p. 094507, 2013.


98. J. Chauhan, A. Rinzler, and J. Guo, "A Computational Study of Graphene Silicon Contact", J. Appl. Phys., vol. 112, p. 104502, 2012.


97. Q. Gao and J. Guo, "Quantum Mechanical Simulation of Graphene Photodetectors", J. Appl. Phys. , vol. 112, p. 084316, 2012.


96. J. Guo, "Modeling of Graphene Nanoribbon Devices", Nanoscale, DOI: 10.1039/C2NR31437A, vol. 4, p. 5538, 2012 (Feature Article).


95. Y. Lu and J. Guo, "Thermal Transport in Grain Boundary of Graphene by Non-equilibrium Green's Function Approach", Appl. Phys. Lett., vol. 101, p. 043112, 2012.


94. B. Kumar, G. Seol, and J. Guo, "Modeling of a Vertical Tunneling Graphene Heterojunction Field-Effect Transistor", Appl. Phys. Lett. , vol. 101, p. 033503, 2012.


93. J. Chauhan, L. Liu, Y. Lu, and J. Guo, "A Computational Study of High-Frequency Behavior of Graphene Field-Effect Transistors", J. of Appl. Phys. , vol. 111, p. 094311, 2012.


92. B. Kumar and J. Guo, "Chiral tunneling in trilayer graphene", Appl. Phys. Lett., vol. 100, p. 163102, 2012.


91. K. Takei, M. Madsen, H. Fang, R. Kapadia, S. Chuang, H. Kim, C. Liu, E. Plis, J. Nah, S. Krishna, Y. Chueh, J. Guo, A. Javey, "Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors", Nano Lett., vo. 12, p. 2060, 2012.


90. J. Nah, B. Kumar, H. Fang, Y. Chen, E. Plis, Y. Chueh, S. Krishna, J. Guo, A. Javey, "Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors", Journal of Physical Chemistry, vol. 116, p. 9750, 2012.


89. B. Kumar and J. Guo, "Strain-induced conductance modulation in graphene grain boundary", Nano Lett., vol. 12, p. 1362, 2012.


88. W. Chen, G. Seol, A. Rinzler, and J. Guo, "Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon junction solar cell", Appl. Phys. Lett., vol. 100, p. 103503, 2012.


87. A. C. Ford, S. B. Kumar, R. Kapadia, J. Guo, A. Javey, "Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires", Nano Lett., vol. 12, p. 1340, 2012.


86. G. Seol and J. Guo, " Metal Contact to Graphene Nanoribbon," Appl. Phys. Lett. , vol. 100, p. 063108, 2012.


85. G. Seol, B. Kumar, and J. Guo, "Performance Projection of Graphene Nanomesh and Nanoroad Transistors, " Nano Research , vol. 5, p. 164, 2012.


84. Q. Gao and J. Guo, "Ab initio quantum transport simulation of silicide-silicon contacts," J. Appl. Phys., vol. 111, p. 014305, 2012.


83. B. Kumar and J. Guo, " Modelling very large magnetoresistance of graphene nanoribbon devices"Nanoscale , vol. 4, p.982, 2012.


82. J. Wu, L. Xie, Y. Li, H. Wang, Y. Ouyang, J. Guo, and H. Dai. "Controlled Chlorine Plasma Reaction for Noninvasive Graphene Doping." J. Am. Chem. Soc., vol. 133, 19668, 2011.


81. W. Chen and J. Guo, " Performance analysis of carbon nanotube contacted phase change memory by finite element method," J. Appl. Phys., vol. 110, p. 084315, 2011.


80. K. Takei, H. Fang, B. Kumar, R. Kapadia, Q. Gao, H. Liu, Y. Chueh, E. Plis, S. Krishna, H. Bechtel, J. Guo, A. Javey, " Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes," Nano Lett. , vol. 11 p. 5008 2011.


79. Q. Gao and J. Guo, " Barrier height determination of silicide-silicon contact by hybrid density functional simulation," Appl. Phys. Lett., vol. 99, p.183110, 2011.


78. X. Wang, Y. Ouyang, L. Jian. H. Wang, L. Xie, J. Wu, J. Guo, and H. Dai "Graphene Nanoribbons with Smooth Edges Behave as Quantum Wires," Nature Nanotech. , vol. 6, p.563, 2011.


77. J. Chauhan and J. Guo "Inelastic Phonon Scattering in Graphene FETs," IEEE Trans. on Electron Devices , vol. 58, p. 3997, 2011.


76. L Liu, B. Kumar, Y. Ouyang, and J. Guo "Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors," IEEE Trans. on Electron Devices , vol. 58, p. 3042, 2011.


75. B. Kumar and J. Guo "Transversal electric field effect in multilayer graphene nanoribbon," Appl. Phys. Lett. , vol. 98, p. 263105, 2011.


74. B. Kumar and J. Guo "Multilayer Graphene Nanoribbon Under Vertical Electric field," J. Appl. Phys. , vol. 109, p. 222101, 2011.


73. P. Wadhwa, G. Seol, M Petterson, J. Guo, and A. Rinzler "Electrolyte-Induced Inversion Layer Schottky Junction Solar Cell," Nano Lett , vol. 11, p. 2419, 2011.


72. Q. Gao and J. Guo "Two-dimensional quantum mechanical modeling of silicide-silicon contact resistance for nanoscale SOI MOSFETS," J. of Appl. Phys. , vol. 109, p. 104307, 2011.


71. B. Kumar and J. Guo "Multilayer graphene under vertical electric field," Appl. Phys. Lett., vol. 98, p. 222101, 2011.


70. G. Seol and J. Guo "Mechanism of Bandgap Opening in Armchair Graphene Nanoribbon Confined by Boron Nitride," Appl. Phys. Lett., vol. 98, p. 143107, 2011.


69. J. Chauhan and J. Guo " Assessment of High-Frequency Performance Limits of Graphene Field-Effect Transistors ," Nano Research, vol. 4, p. 571, 2011.


68. Y. Ouyang and J. Guo "Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation," Solid State Electronics, vol. 61, p. 18, 2011.


67. Y. Ouyang and J. Guo "Carbon-based nanomaterials as contacts to graphene nanoribbons," Appl. Phys. Lett., vol. 97, p. 263115, 2010.


66. Y. Ouyang, S. Sanvito and J. Guo "Effects of edge chemistry doping on graphene nanoribbon mobility," Surface Sciences, doi:10.1016/j.susc.2010.10.030, 2010.


65. Y. Lu and J. Guo "Edge Dopant Energy Levels of Graphene Nanoribbons," Appl. Phys. Lett., vol. 97, p. 113102, 2010.


64. S.J. Pearton, C.Y. Chang, B.H. Chu, C.F. Lo, F. Ren, Wenchao Chen and Jing Guo "ZnO, GaN and InN Functionalized Nanowires For Sensing and Photonics Applications ," IEEE Journal of Selected Topics in Quantum Electronics,accepted, 2010.


63. M. Choudhury, Y. Yoon, J. Guo, and K. Mohanram "Graphene Nanoribbon FETs: Technology Exploration for Perfomrance and Reliability," IEEE Trans. on Nanotechnology , vol. 10, p. 727, 10.1109/TNANO.2010.2073718, 2010.


62. Y. Lu and J. Guo "Local Strain in Tunneling Transistors Based on Graphene Nanoribbons," Appl. Phys. Lett., vol. 97, p. 073105, 2010.


61. Y. Lu and J. Guo "Bandgap of Strained Graphene Nanoribbons," Nano Research, vol. 3, p. 189, 2010.


60. Y. Ouyang, H. Dai, and J. Guo "Projected Performance Advantage of Multilayer Graphene Nanoribbons as a Transistor Channel Material," Nano Research, vol. 3, p. 8 2010.


59. J. Chauhan and J. Guo "High Field Transport and Velocity Saturation in Graphene," Appl Phys. Lett., vol. 95,023120, 2009.


58. J. Guo and Y. Ouyang "Spin-Polarized Edge and Transport in Graphane Nanoscale Junctions," Appl Phys. Lett., vol. 94, 263107, 2009.


57. Y. Ouyang and J. Guo "A Theoretical Study on Thermoelectric Properties of Graphene Nanoribbons," Appl Phys. Lett., vol. 94, 243104, 2009.


56. X. Wang, X. Li, L. Zhang, Y. Yoon, P. Weber, H. Wang, J. Guo, and H. Dai "N-Doping of Graphene Through Electrothermal Reactions with Ammonia," Science, vol. 324, p. 768, 2009. (News Release: Sciencedaily, UF News)


55. P. Zhao, J. Chauhan, and J. Guo "A Computational Study of Tunneling Transistor Based on Graphene Nanoribbon," Nano Lett., vol. 9, p. 684, 2009.


54. A. Ford, J. C. Ho, Y.-L. Chueh, Y.-C. Tseng, Z. Fan, J. Guo, J. Bokor, A. Javey "Diameter-Dependent Electron Mobility of InAs Nanowires," Nano Lett., vol. 9, p. 360, 2009.


53. P. Zhao and J. Guo "Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods," J. Appl. Phys., vol. 105, p. 034503, 2009.


52. S. Pearton D. Norton, L. Tien, and J. Guo "Modeling and Fabrication of ZnO Nanowire Transistors," IEEE Trans. on Electron Devices, vol. 55, p. 3012, Nov, 2008 (Invited).


51. P. Zhao, M. Choudhury, K. Mohanram, and J. Guo "Computational Model of Edge Effects in Graphene Nanoribbon Transistors," Nano Research, vol. 1, no. 5, pp. 395-402, 2008.


50. Y. Yoon, G. Fiori, S. Hong, G. Iannaccone, and J. Guo "Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs," IEEE Trans. on Electron Devices, vol. 55, no. 9, pp. 2314-2323, 2008.


49. Y. Ouyang, X. Wang, H. Dai, and J. Guo "Carrier Scattering in Graphene Nanoribbon Transistors," Appl Phys. Lett., 92, 243124, 2008.


48. B. Liu, M. McCarthy, Y. Yoon, D. Kim, Z. Wu, F. So, P. Hooloway, J. Reynolds, J. Guo, and A. Rinzler, "Carbon nanotube enabled vertical field-effect and light emitting tansistors," Advanced Materials, vol. 20, pp. 3605-3609, 2008.


47. J. Guo, D. Gunlycke, and C. T. White "Field effect on spin-polarized transport in graphene nanoribbons," Appl Phys. Lett., 92, 163109, 2008.


46. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, H. Dai"Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors" Phys. Rev. Lett., 100, 206803, 2008.


45. S. Hong, Y. Yoon, and J. Guo "Metal-Semiconductor Junctions in All-Graphene Devices and Circuits," Appl Phys. Lett., 92, 083107, 2008.


44. Y. Ouyang, P. Campbell and J. Guo "Analysis of Ballistic Monolayer and Bilayer Graphene Field-Effect Transistors," Appl Phys. Lett., 92, 063120, 2008.


43. Y. Yoon, J. Fodor, and J. Guo "A Computational Study of Vertical Partial Gate Carbon Nanotube FETs ," IEEE Trans. on Electron Devices , 55, 283, 2008.


42. A. Behnam, J. Guo, and A. Ural "Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films," Journal of Appl Phys. , 102, 044313, 2007.


41. Y. Yoon, and J. Guo "Effect of Edge Roughness in Graphene Nanoribbon Transistors," Appl Phys. Lett., 91, 073103, 2007.


40. J. Guo, Y. Yoon, and Y. Ouyang " Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons," Nano Lett., 7, 1935, 2007.


39. Y. Ouyang, D. Mann, H. Dai, and J. Guo "Theoretical Investigations of Thermal Light Emission from Carbon Nanotubes," IEEE Trans. on Nanotechnology, 6, 682, 2007.


38. Y. Ouyang, Y. Yoon, and J. Guo "Scaling Behaviors of Graphenen Nanoribbon FETs: a 3D Quantum Simulation," IEEE Trans. on Electron Devices, 54, 2223, Sep. 2007.


37. Y. Yoon and Jing Guo "Analysis of Strain Effects in Ballistic Carbon Nanotube FETs," IEEE Trans. on Electron Devices, 54 p. 1280, 2007.


36. J. Guo, M. Alam, and Y. Ouyang "Sub-Bandgap Impact Ionization and Excitation in Carbon Nanotube Transistors," Journal of Applied Physics, 101, 064311, 2007.


35. D. Mann, Y. K. Kato, A. Kinkhabwala, E. Pop, J. Cao, X. Wang, L. Zhang, Q. Wang, J. Guo, and H. Dai, "Electrically Driven Thermal Light Emission from Individual Single-Walled Carbon Nanotubes," Nature Nanotechnology, 2, 33, Jan. 2007.


34. Y. Yoon, J. Lin, S. Pearton, and J. Guo, "Role of Grain Boundaries in ZnO Nanowire Transistors," Journal of Applied Physics, 101, 024301 Jan. 2007.


33. Y. Ouyang, Y. Yoon, and J. Guo, "On Current Delivery Limits of Semiconducting Carbon Nanotubes," Journal of Computer Aided Material Design, 14, 73, 2007.


32. N. Pimparkar, J. Guo, and M. A. Alam "Performance Assessment of Sub-Percolating Nanobundle Network Thin Film Transistors by an Analytical Model ," IEEE Trans. on Electron Devices, 54 , 637, 2007.


31. Y. Chen, Y. Ouyang, J. Guo, and T. Wu "Time-Dependent Transport and Non-Quasi Static Effects in Carbon Nanotube Transistors," Applied Physics Letters, 89, 203122, 2006.


30. Y. Ouyang, Y. Yoon, J. Fodor, and J. Guo, "Comparison of Performance Limits for Carbon Nanribbon and Carbon Nanotube Transistors," Applied Physics Letters, 89, 203107, 2006.


29. Y. Ouyang, and J. Guo, "Heat Dissipation in Carbon Nanotube Transistors," Applied Physics Letters, 89, 183122, 2006.


28. J. Guo, M. A. Alam, and Y. Yoon, "Theoretical Investigations on Photoconductivity of Single Intrinsic Carbon Nanotubes," Applied Physics Letters, vol. 88, 133111, 2006.


27. Y. Yoon, Y. Ouyang, and J. Guo, "Effect of Phonon Scattering on Intrisic Delay and Cut-Off Frequency of CNTFETs," vol. 52, 2467-2470, IEEE Trans. on Electron Devices, 2006.


26. J. Guo, E. C. Kan, U. Ganguly, and Y. Zhang, "High Sensitivity and Non-Linearity of Carbon Nanotube Based Charge Sensors," Journal of Applied Physics, vol. 99, 084301, 2006.


25. N. Neophytou, J. Guo, and M. Lundstrom, "Three-Dimensional Electrostatic Effects of Carbon Nanotube Transistors," IEEE Trans. on Nanotechnology, 4, 385, 2006.


24. J. Guo,"A Quantum Mechanical Treatment of Phonon Scattering in Carbon Nanotube Transistors," Journal of Applied Physics, 98, 063519, 2005. [PDF 325k]


23. J. Guo, S. Hasan, A. Javey, G. Bosman, and M. Lundstrom, " Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors," IEEE Trans. on Nanotechnology, vol. 4, p. 715, 2005. [PDF 330k]


22. J. Guo, M. Lundstrom, "On the Role of Phonon Scattering in Carbon Nanotube Transistors," Applied Physics Letters, 86, 193103, 2005. [PDF 200k]


21. J. Guo, S. Koswatta, N. Neophytou, and M. Lundstrom "Carbon Nanotube Field-Effect Transistors," International Journal of High Speed Electronics and Systems, invited, 16, 897, 2006. [PDF 325k]


20. J. Guo, M. A. Alam, "Carrier Transport and Light-Spot Movement in Carbon Nanotube Infrared Emitters," Applied Physics Letters, 86, 023105, 2005. [PDF 180k]


19. A. Javey, R. Tu, D. Farmer, J. Guo, R. Gordon, and H. Dai, "High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts," Nano Letters, vol. 5, 345-348, 2005. [PDF 219k]


18. J. Guo, S. Datta, M. P. Anantram, and M. Lundstrom, "Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green's Function Formalism," Jounral of Computational Electronics, vol. 3, 373-377, 2004.


17. S. Hasan J. Guo, M. Vaidyanathan, M. A. Alam, and M. Lundstrom, "Monte-Carlo Simulation of Carbon Nanotube Devices," Journal of Computational Electronics , vol. 3, p. 333-336, 2004


16. N. Neophytou, M. Lundstrom and J. Guo, "Electrostatics of 3D Carbon Nanotube Field-Effect Transistors," Journal of Computational Electronics , vol. 3, p. 277-280, 2004


15. J. Guo, Supriyo Datta and M. Lundstrom, "A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors," IEEE Transactions on Electron Devices , vol. 51, p. 172, Feb, 2004. [PDF 279k]


14. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom and H. Dai, "High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes," vol. 92, p. 106804, 2004 Physical Review Letters [PDF 323k]


13. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, "Multi-Scale Modeling of Carbon Nanotube Transistors,", The International Journal on Multiscale Computational Engineering (Invited), vol. 2, p. 257, 2004. [PDF 1300k]


12. A. Javey, J. Guo, D. B. Farmer et al., ˇ°Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics,ˇ± Nano Letters, vol. 4, p. 447, 2004.


11. A. Javey, J. Guo, D. B. Farmer, W. Wang, E. Yenilmez, R. Gordon, M. Lundstrom, and H. Dai, "Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays," Nano Letters, vol. 4, p. 1319, 2004.


10. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, "Ballistic Carbon Nanotube Field-Effect Transistors," Nature, vol. 424, p. 654, 2003 [PDF 539k]


9. J. Guo, J. Wang, E. Polizzi, Supriyo Datta and M. Lundstrom, "Electrostatics of Nanowire Transistors," IEEE Transactions on Nanotechnology, vol. 2, p. 329, Dec, 2003 [PDF 280k]


8. A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Transistors," IEEE Transactions on Electron Devices, vol. 50, p. 1897, 2003 [PDF 965k]


7. J. Guo, S. Goasguen, M. Lundstrom and S. Datta, "Metal-Insulator-Semiconductor Electrostatics of Carbon Nanotubes," Applied Physics Letters, vol. 81, p. 1486, 2002 [PDF 109k]


6. J. Guo, M. Lundstrom and S. Datta, "Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors," Applied Physics Letters, vol. 80, no. 17, p. 3192, 2002 [PDF 124k]


5. J. Guo and M. Lundstrom, "A Computational Study of Thin-Body, Double-Gate, Schottky Barrier MOSFETs" IEEE Transactions on Electron Devices, vol. 49, p. 1897, 2002 [PDF 525k]


4. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High Dielectrics For Advanced Carbon Nanotube Transistors and Logic," Nature Materials, vol. 1, p.241, 2002 [PDF 491k]


3. J. Guo, Z. Ren and Mark Lundstrom, "A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance," Journal of Computational Electronics, vol. 1, p. 185,2002 [PDF 76k]


2. J. Guo J. Jiang and Q. Cai, "The Tunneling Conductance inside the unit Cell of Bi2Sr2CaCu2O8," Physica C, vol. 341-348, p. 1551, 2000 [PDF 109k]


1. J. Guo J. Jiang and Q. Cai, "The Fine Structures in I-V curves of Single-Electron Transistor Made by Double Unit Cells of Bi2Sr2CaCu2O8," Physica C, vol. 341-348, p. 1603, 2000 [PDF 109k]